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| NTVS3141P Power MOSFET -20 V, -3.7 A, 85 mW, Single P-Channel, CSP 1.0x1.5x0.65 mm Features * * * * Low RDS(on) at Low Gate Voltage Chip Scale Packaging High Power Density (A/mm2) This is a Pb-Free Device http://onsemi.com V(BR)DSS RDS(ON) MAX 85 m @ -4.5 V -20 V 123 m @ -2.5 V 150 m @ -1.8 V 200 m @ -1.5 V Unit V V A A W W A C A C D P-Channel MOSFET PD IDM TJ, TSTG IS TL 0.9 -15 -55 to 150 -1.1 250 G -3.7 A ID MAX (Note 1) Applications * Load Switch in Cell Phone, DSC, PMP, GPS, PC's * Battery Charging Switch MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 1) Power Dissipation (Note 2) Pulsed Drain Current Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (IR/Convection) Steady State Steady State Steady State Steady State TA = 25C TA = 25C TA = 25C TA = 25C tp = 10 ms Symbol VDSS VGS ID ID PD Value -20 "8 -3.7 -2.9 1.5 S A1 6 PIN FLIP-CHIP 1.0 x 1.5 CASE 499BC THERMAL RESISTANCE RATINGS Rating Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RJA RJA Max 83 133 Unit C/W C/W PIN CONNECTION AND MARKING DIAGRAM 1. Surface-mounted on FR4 board using 1 inch sq pad size (Cu area = 1 in sq [2 oz] including traces) 2. Surface-mounted on FR4 board using 77.3 sq mm min pad, 2 oz Cu. 3141 = Specific Device Code WW = Work Week ORDERING INFORMATION Device NTVS3141PT2G Package CSP-6 (Pb-Free) Shipping 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 March, 2009 - Rev. 0 1 Publication Order Number: NTVS3141P/D NTVS3141P MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = -4.5 V, ID = -1.0 A VGS = -2.5 V, ID = -1.0 A VGS = -1.8 V, ID = -1.0 A VGS = -1.5 V, ID = -1.0 A On to State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Reverse Recovery Charge VSD tRR QRR VGS = 0 V, IS = -1.1 A VGS = 0 V, di/dt = 100 A/ms, IS = -1.1 A -0.7 37 23 -1.2 V ns nC ID(on) gFS CISS COSS CRSS QG(TOT) QGS QGD RG td(ON) tr td(OFF) tf VGS = -4.5 V, VDS = -10 V, ID = -1.0 A, RG = 6.0 W VGS = -4.5 V, VDS = -5.0 V VDS = -5.0 V, ID = -1.0 A -10 6.0 840 VGS = 0 V, f = 1.0 MHz, VDS = -10 V 155 120 9.0 VGS = -4.5 V, VDS = -10 V, ID = -1.0 A f = 1 MHz 1.0 3.0 9.0 7.5 9.5 35 50 20 20 65 80 W ns 13 nC VGS = VDS, ID = -250 mA -0.4 -0.7 3.0 73 87 107 134 85 123 150 200 A S pF -1.2 V mV/C mW V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, ID = -250 mA ID = -250 mA, ref to 25C VGS = 0 V, VDS = -20 V VDS = 0 V, VGS = 8 V -20 -9.0 -1.0 0.1 V mV/C mA mA Symbol Test Condition Min Typ Max Unit CHARGES, CAPACITANCES AND GATE RESISTANCE SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) 3. Pulse Test: pulse width 300 ms, duty cycle 2% http://onsemi.com 2 NTVS3141P TYPICAL PERFORMANCE CURVES 16 -ID, DRAIN CURRENT (AMPS) VGS = -4.5 V -2.5 V -3.5 V 12 -2.0 V TJ = 25C -ID, DRAIN CURRENT (AMPS) 16 VDS 10 V 12 8 8 4 -1.5 V 4 TJ = 125C TJ = 25C TJ = -55C 2.0 1.0 1.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 0.5 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.200 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.200 Figure 2. Transfer Characteristics ID = -1 A TJ = 25C TJ = 25C 0.160 0.160 VGS = -1.5 V 0.120 VGS = -1.8 V VGS = -2.5 V 0.120 0.080 0.080 VGS = -4.5 V 0.040 1 3 5 7 9 11 13 15 17 0.040 1 2 3 4 5 6 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 10000 1.3 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.2 1.1 1.0 0.9 0.8 -50 ID = -1 A VGS = -4.5 V VGS = 0 V -IDSS, LEAKAGE (nA) 1000 TJ = 150C TJ = 125C 100 -25 0 25 50 75 100 125 150 10 0 5 10 15 20 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTVS3141P TYPICAL PERFORMANCE CURVES VGS = 0 V TJ = 25C Ciss -VGS, GATE-TO-SOURCE VOLTAGE (V) 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0 0 Crss 15 5 10 DRAIN-TO-SOURCE VOLTAGE (V) 20 Coss 5 QT 4 3 2 1 0 Q1 Q2 VDS = -10 V ID = -1 A TJ = 25C 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) 10 Figure 7. Capacitance Variation Figure 8. Gate-to-Source Voltage vs. Total Gate Charge 1.4 -IS, SOURCE CURRENT (AMPS) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.2 0.4 0.3 0.5 0.7 0.6 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 0.8 VGS = 0 V TJ = 25C 1000 VDD = -10 V ID = -1.0 A VGS = -4.5 V t, TIME (ns) 100 td(off) tf tr 10 td(on) 1 1 10 RG, GATE RESISTANCE (OHMS) 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 100 -ID, DRAIN CURRENT (AMPS) 10 1 0.1 0.01 VGS = 10 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT Figure 10. Diode Forward Voltage vs. Current 10 ms 100 ms 1 ms 10 ms dc 100 0.001 0.1 1 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 NTVS3141P TYPICAL PERFORMANCE CURVES EFFECTIVE TRANSIENT THERMAL RESISTANCE 1000 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.01 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 t, TIME (sec) 0.1 1 10 100 1000 Figure 12. Thermal Response http://onsemi.com 5 NTVS3141P PACKAGE DIMENSIONS 6 PIN FLIP-CHIP, 1.0x1.5 CASE 499BC ISSUE A D AB NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO THE SPHERICAL CROWNS OF THE SOLDER BALLS. DIM A A1 A2 b D E e MILLIMETERS MIN MAX --- 0.64 0.22 0.28 0.34 0.36 0.29 0.34 0.92 1.00 1.42 1.50 0.50 BSC TOP VIEW A 0.10 C A2 A1 6X 0.05 C SIDE VIEW C SEATING PLANE e e C B A 6X b 0.05 C A B 0.03 C BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. E 1 2 PIN A1 REFERENCE E http://onsemi.com 6 NTVS3141P/D |
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